Advanced Data Encryption ?using 2D Materials

نویسندگان

چکیده

Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences bits. TRNG circuits with high degree randomness and low power consumption may be fabricated by using telegraph noise (RTN) current signals produced polarized metal/insulator/metal (MIM) devices as entropy source. However, RTN MIM made traditional insulators, i.e., transition metal oxides like HfO2 Al2O3, are not stable enough due formation lateral expansion defect clusters, resulting in undesired fluctuations disappearance effect. Here, fabrication highly consumption, (even for a long string 224 ? 1 bits), throughput Mbit s?1 multilayer hexagonal boron nitride (h-BN) is shown. Their application also demonstrated one-time passwords, which ideal internet-of-everything. The superior stability h-BN-based related presence few-atoms-wide defects embedded within layered crystalline structure h-BN stack, produces confinement effect that avoids their results operation.

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ژورنال

عنوان ژورنال: Advanced Materials

سال: 2021

ISSN: ['1521-4095', '0935-9648']

DOI: https://doi.org/10.1002/adma.202100185